Abstract
For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.
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References
K. K. Likharev, Proc. IEEE 87, 606 (1999).
K. K. Likharev, IEEE Trans. Magn. 23, 1142 (1987).
J. R. Tucker, J. Appl. Phys. 72, 4399 (1992).
E. Leobandung, L. Guo, Y. Wang and S. Y. Chou, J. Vac. Sci. Technol., B 13, 2865 (1995).
E. Leobandung, L. Guo and S. Y. Chou, Appl. Phys. Lett. 67, 2338 (1995).
Y. Ono, H. Inokawa and Y. Takahashi, IEICE Trans. Electron. E84-C, 1061 (2001).
K. Uchida, J. koga, R. Ohba, S. Takagi and A. Toriumi, Jpn. J. Appl. Phys. 90, 3551 (2000).
H. Ishikuro and T. Hiramot, Appl. Phys. Lett. 71, 3691 (1997).
M. Saitoh, N. Takahashi, H. Ishikuro and T. Hiramoto, Jpn. J. Appl. Phys. 40, 2010 (2001).
M. Saitoh, H. Majima and T. Hiramoto, Jpn. J. Appl. Phys. 42, 2426 (2003).
H. Inokawa, A. Fujiwara and Y. Takahashi, Jpn. J. Appl. Phys. 41, 2566 (2002).
M. Nagase, S. Horiguchi, A, Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu and Y. Takahashi, Appl. Surf. Sci. 109, 144 (2002).
D. H. Kim, S-K. Sung, K. R. Kim, J. D. Lee, B-G. Park, B. H. Choi, S. W. Hwang and D. Ahn, IEEE Trans. Electron Devices 49, 627 (2002).
S. W. Kang, D. H. Kim, J-H. Kim, J-E. Lee, J. D. Lee and B-G. Park, Jpn. J. Appl. Phys. 47, 3118 (2008).
S. J. Shin, C. S. Jung, B. J. Park, T. K. Yoon and J. J. Lee, Appl. Phys. Lett. 97, 103101 (2010).
S. J. Shin, J. J. Lee, H. J. Kang, J. B. Choi, S-R. E. Yang, Y. Takahashi and D. G. Hasko, Nano Lett. 11, 1591 (2011).
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Kang, KC., Lee, JE., Lee, JH. et al. Poly-silicon quantum-dot single-electron transistors. Journal of the Korean Physical Society 60, 108–112 (2012). https://doi.org/10.3938/jkps.60.108
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DOI: https://doi.org/10.3938/jkps.60.108