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Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary

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Abstract

In this article, segregation and thermal dissociation kinetics of hydrogen at a large-angle general grain boundary in crystalline silicon have been investigated using deuterium, a readily identifiable isotope that duplicates hydrogen chemistry. Segregation or trapping of introduced deuterium (hydrogen) was found to take place at the (110)/(001) Si grain boundary. The segregation coefficient (k) of deuterium (hydrogen) at the grain boundary was determined as k≈24±3 at 100°C. Thermal dissociation of deuterium (hydrogen) from the grain boundary obeyed first-order kinetics with an activation energy of ∼1.62 eV.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, North Carolina, USA

    Yongkook Park & George Rozgonyi

  2. Research and Development Division, Glory Silicon Energy Corporation, 212214, Yangzhong, Jiangsu, China

    Jinggang Lu

Authors
  1. Yongkook Park
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  2. Jinggang Lu
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  3. George Rozgonyi
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Correspondence to Yongkook Park.

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Park, Y., Lu, J. & Rozgonyi, G. Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary. Electron. Mater. Lett. 6, 1–5 (2010). https://doi.org/10.3365/eml.2010.03.001

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  • DOI: https://doi.org/10.3365/eml.2010.03.001

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