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Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control

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Abstract

Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quantum dot (QD) nanosystems. Numerical results predicted that while the stacking period control leads to the shifts in valence band edges, incorporation of In x Ga1−x As ternary strain relief layer (SRL) causes composition-dependent shifts in conduction band edges. On the other hand, modification of the SRL shape itself did not yield significant changes in the confinement potentials. It is therefore suggested that strain control by incorporation of ternary intermediate layers combined with geometry controls, would allow greater flexibility in the tailoring of the opto-electronic characteristics of QD-based systems.

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Authors and Affiliations

  1. School of Nano & Advanced Materials Engineering, Changwon National University, 9 Sarim-dong, Changwon, 641-773, Gyoungnam, Republic of Korea

    Woong Lee & Keesam Shin

  2. Dept. of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, 120-749, Seoul, Republic of Korea

    Jae-Min Myoung

Authors
  1. Woong Lee
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  2. Keesam Shin
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  3. Jae-Min Myoung
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Correspondence to Jae-Min Myoung.

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Lee, W., Shin, K. & Myoung, JM. Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control. Electron. Mater. Lett. 5, 145–150 (2009). https://doi.org/10.3365/eml.2009.12.145

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  • DOI: https://doi.org/10.3365/eml.2009.12.145

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