Abstract
Antireflection properties of subwavelength-sized dielectric SiGe particles grown on Si(100) substrates using the dewetting phenomenon are studied. The average particle size has been set by the amount of deposited Ge in the range from 0.2 to 1.4 \(\mu\)m. The studied excitation of magnetic and electric resonances in dielectric SiGe particles has led to a decrease in reflection by approximately 60\(\%\) depending on the average particle size compared to the reflection of the Si surface not covered with particles. The particle size distribution has provided antireflection properties over a wide spectral range, in which small particles created a stronger antireflection effect than large ones. Model calculations have shown that, for particles on the substrate, the efficiency of excitation of magnetic and electric resonances has a strong dependence on the ratio of particle height to particle base size.
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Funding
This work was supported by the Russian Science Foundation, project no. 19-72-30023. The experiments were carried out using the equipment of the CKP ‘‘NANOSTRUKTURY’’ of the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences and CKP ‘‘VTAN’’ (ATRC) of the NSU Physics Department.
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Translated by O. Pismenov
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Utkin, D.E., Tsarev, A.V., Utkin, E.N. et al. Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles. Optoelectron.Instrument.Proc. 57, 494–504 (2021). https://doi.org/10.3103/S8756699021050162
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DOI: https://doi.org/10.3103/S8756699021050162