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Influence of processing of yeast Saccharomyces cerevisiae with millimeter waves on fermentation indices in technology of bioethanol production

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Abstract

The influence of electromagnetic radiation (EMR) of millimeter range on the technical and chemical indicators of molasses wort fermentation with irradiated seed yeast has been investigated in the technology of bioethanol production. The optimum irradiation parameters in the range of 53–55 GHz for the yeast culture Saccharomyces cerevisiae M-09 were experimentally determined. In the alcoholic mash the accumulation of biomass, alcohol, and the amount of carbon dioxide emissions increased in comparison with the control. At the same time, the quantity of residual carbohydrates decreased. The effect of EMR action on the yeast culture was preserved for six generations but it gradually weakened. It can be explained by the adaptation of Saccharomyces cerevisiae to the influence of external factors.

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Authors and Affiliations

  1. Educational-Scientific Center “Physical-Chemical Material Science,” Shevchenko National University of Kyiv, National Academy of Ukraine, ul. Volodymyrska 64, Kyiv-33, 01033, Ukraine

    A. V. Yakunov, A. I. Nizhelska & V. A. Makara

  2. National Technical University of Ukraine “Kyiv Polytechnic Institute”, pr. Peremohy 37, Kyiv-56, 03056, Ukraine

    L. V. Marinchenko

  3. National University of Food Technologies, ul. Volodymyrska 68, Kyiv-33, 01601, Ukraine

    V. A. Marinchenko

Authors
  1. A. V. Yakunov
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  2. A. I. Nizhelska
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  3. L. V. Marinchenko
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  4. V. A. Marinchenko
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  5. V. A. Makara
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Corresponding author

Correspondence to A. V. Yakunov.

Additional information

Original Russian Text © A.V. Yakunov, A.I. Nizhelska, L.V. Marinchenko, V.A. Marinchenko, V.A. Makara, 2015, published in Elektronnaya Obrabotka Materialov, 2015, No. 2, pp. 55–60.

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Yakunov, A.V., Nizhelska, A.I., Marinchenko, L.V. et al. Influence of processing of yeast Saccharomyces cerevisiae with millimeter waves on fermentation indices in technology of bioethanol production. Surf. Engin. Appl.Electrochem. 51, 156–161 (2015). https://doi.org/10.3103/S1068375515020143

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  • DOI: https://doi.org/10.3103/S1068375515020143

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