Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon

Abstract

In this work, we study the spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon. It is found that the formation of multicharged nanoclusters significantly changes the structure of the energy states of manganese atoms in silicon and leads to the formation of donor energy levels in the range of E =E _V + (0.16–0.5) eV. In these materials, the photocurrent in the range of hν = 0.16–0.6 eV continuously and abruptly increases and has very high values; that is, it exhibits a high impurity photosensitivity. It is revealed that the photosensitivity of these samples in the range of hν = 0.16–0.8 eV increases with the increasing electric field according to the law ∼ E ^3.8–4. It is determined that the photoconductivity and photosensitivity of the material can be varied over a wide range via controlling the charge state of the nanoclusters.