Abstract
Peculiarities of obtaining of tin oxide and titanium oxide layers and semiconductor structures on their basis are described. The X-ray diffraction data show that the SnO2 and TiO2 layers possess the tetragonal crystal structure (anatase modification for TiO2). The results of analysis of the elemental composition and impedance investigations of the fabricated structures in model chloride-sulfate solutions demonstrate that the oxide/SiO2/Si structures are obtained if Si substrates are used. In the case of InP substrates, the oxide layer at the interface is not detected and the corresponding structure is oxide/InP. The results of investigations of corrosion show that a substantial shift of the corrosion potential to the anode region is observed in the case of deposition of SnO2 and TiO2 oxide layers on Si and InP crystals and fabrication of corresponding semiconductor structures. This demonstrates the possibility of the use of these materials in photoelectrochemical applications.
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Original Russian Text © O.L. Bersirova, L.I. Bruk, A.I. Dikusar, M.I. Karaman, S.P. Sidel’nikova, A.V. Simashkevich, D.A. Sherban, Yu.S. Yapontseva, 2007, published in Elektronnaya Obrabotka Materialov, 2007, No. 6, pp. 40–49.
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Bersirova, O.L., Bruk, L.I., Dikusar, A.I. et al. Thin films of titanium and tin oxides and semiconductor structures on their basis obtained by pyrolytic pulverization: Preparation, characterization, and corrosion properties. Surf. Engin. Appl.Electrochem. 43, 443–452 (2007). https://doi.org/10.3103/S1068375507060075
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DOI: https://doi.org/10.3103/S1068375507060075