Abstract
The dark and photo current–voltage characteristics (CVC), the absorption spectrum and the photosensitivity of the field effect transistor based on the silicon nanowires have been investigated. The spectral dependences of the photocurrent have been obtained. It is shown that the absorption capacity of the silicon nanowire is shifted to the shorter wavelengths. In contrast to the bulk silicon, the photocurrent and the photosensitivity rise at room temperature and have the record high values in the ultraviolet region. It is proposed to use the field-effect transistors based on the silicon nanowires operating at the room temperature as the highly-sensitive detectors for the ultraviolet spectral region.
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Original Russian Text © F.V. Gasparyan, A.H. Arakelyan, H.D. Khondkaryan, 2016, published in Izvestiya Natsional’noi Akademii Nauk Armenii, Fizika, 2016, Vol. 51, No. 4, pp. 464–470.
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Gasparyan, F.V., Arakelyan, A.H. & Khondkaryan, H.D. The effect of shifting of the absorption edge in the silicon nanowire. J. Contemp. Phys. 51, 345–349 (2016). https://doi.org/10.3103/S106833721604006X
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DOI: https://doi.org/10.3103/S106833721604006X