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Sensor properties of structures with porous silicon layer

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

We have measured at room temperature current-voltage and noise characteristics of structures with a porous silicon (porosity 80%) layer at adsorption of gases ammonia, propane and butane mixture, and ethyl alcohol vapor. It was obtained that the largest change in CVC and low-frequency noise is observed under action of ammonia gas on the structure. Physical reasons of sensor properties of studied samples are discussed.

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Authors and Affiliations

  1. Yerevan State University, Yerevan, Armenia

    Z. H. Mkhitaryan, V. M. Aroutiounian & Sh. A. Geghamyan

Authors
  1. Z. H. Mkhitaryan
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  2. V. M. Aroutiounian
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  3. Sh. A. Geghamyan
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Additional information

Original Russian Text © Z.H. Mkhitaryan, V.M. Aroutiounian, Sh.A. Geghamyan, 2011, published in Izvestiya NAN Armenii, Fizika, 2011, Vol. 46, No. 3, pp. 210–216.

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Mkhitaryan, Z.H., Aroutiounian, V.M. & Geghamyan, S.A. Sensor properties of structures with porous silicon layer. J. Contemp. Phys. 46, 135–139 (2011). https://doi.org/10.3103/S1068337211030091

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  • DOI: https://doi.org/10.3103/S1068337211030091

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