Abstract
Based on importance of porous silicon in nearly all physical and chemical properties such as mechanical, electrical, and optical on one hand and its application in optoelectronic devices on the other hand, we decided to plan and construction a setup to receive a proper porous silicon in the case of uniformity in diameter and depth of pores which was confirmed by FESEM measurements. Using AFM images, topography parameters and fractal dimensions were calculated and compared. Optical band gap of silicon and porous silicon was compared. The prepared samples were applied to use as a gas sensor to exposure of ethanol and acetone vapors from 100 to 400 ppm. Interesting results of application of fabricated samples has been reported in result section.
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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.
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ISO 25178–2: 2012, Geometrical product specifications (GPS) - Surface texture: Areal - Part 2: Terms, definitions and surface texture parameters
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Emad Moghimi: Conceptualization, Methodology, Writing—original draft. Mohammad Esmaeil Azim Araghi: Data curation, Investigation, Writing—review & editing. All authors read and approved the final manuscript.
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Appendix 1
Appendix 1
The amplitude parameters of 3-D surface roughness, according with ISO 25178–2:2012 are defined as follows:
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(Sa): Arithmetical mean height is the mean surface roughness.
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(Sq): Root mean square height is the standard deviation of the height distribution, or RMS surface roughness.
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(Ssk): Skewness is the third statistical moment, quantifying the symmetry of the height distribution. Negative skew indicates a predominance of valleys, while positive skew is seen on surfaces with peaks.
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(Sku): Kurtosis is the fourth statistical moment, quantifying the flatness of the height distribution. For spiky surfaces, Sku > 3; for bumpy surfaces, Sku < 3; perfectly random surfaces have kurtosis of 3.
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Moghimi, E., Azim Araghi, M.E. Ethanol and Acetone Gas Sensor Properties of Porous Silicon Based on Resistance Response. Silicon 15, 5821–5827 (2023). https://doi.org/10.1007/s12633-023-02607-z
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DOI: https://doi.org/10.1007/s12633-023-02607-z