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Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1−xAlxAs semiconductor superlattice

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

The effect of interdiffusion of Al and Ga atoms on the confining potential and band structure of a three-dimensional superlattice, composed of initially spherical GaAs/Ga1−xAlxAs quantum dots, is investigated in the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the disappearance of the quantum dots’ spherical symmetry and to the broadening of the superlattice energy minibands.

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Authors and Affiliations

  1. Yerevan State University, Yerevan, Armenia

    V. N. Mughnetsyan & A. A. Kirakosyan

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  1. V. N. Mughnetsyan
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  2. A. A. Kirakosyan
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Original Russian Text © V.N. Mughnetsyan, A.A. Kirakosyan, 2009, published in Izvestiya NAN Armenii, Fizika, 2009, Vol. 44, No. 3, pp. 207–212.

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Mughnetsyan, V.N., Kirakosyan, A.A. Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1−xAlxAs semiconductor superlattice. J. Contemp. Phys. 44, 140–144 (2009). https://doi.org/10.3103/S1068337209030086

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  • DOI: https://doi.org/10.3103/S1068337209030086

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