Skip to main content
SpringerLink
Log in

Lifetime of nonequilibrium charge carriers in the base of p-n-junction semiconductor diode at arbitrary injection levels

  • Published:
Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

In the approximation of exponential distribution of nonequilibrium charge carriers in the base of semiconductor p-n-junction diode a formula is obtained for lifetime calculation, which is valid at arbitrary injection levels. The lifetime is determined via measurements of only stationary characteristics of diodes (dc-CVC and low-frequency differential resistance). These characteristics, as well as the dependence of the barrier capacity on the reverse voltage, for determination of equilibrium concentration of carriers in the diode base, have been measured for D226B alloy diodes. The dependence of the lifetime of nonequilibrium carriers on the injection level, calculated from experimental data, agrees with the Shockley-Read theory of recombination; this agreement may be considered as a justification of assumptions made for lifetime calculation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Soldatenkov, F.Yu., Danil’chenko, V.G., and Korol’kov, V.I., FTP, 2007, vol. 41, p. 217.

    Google Scholar 

  2. Kuan, C.H. and Tu, C.H., J. Appl. Phys., 2000, vol. 87, p. 1836.

    Article  ADS  Google Scholar 

  3. Karazhanov, S.Zh., J. Appl. Phys., 2001, vol. 89, p. 332.

    Article  ADS  Google Scholar 

  4. Radchuk, N.B. and Ushakov, A.Yu., PTE, 2003, no. 3, p. 112.

  5. Pavlov, L.P., Metodi izmereniya parametrov poluprovodnikovikh materialov (Methods of Measurement of Parameters of Semiconductor Materials), Moscow: Visshaya shkola, 1987.

    Google Scholar 

  6. Milnes, A.G., Deep Impurities in Semiconductors, New York: Wiley, 1973.

    Google Scholar 

  7. Iglitsin, M.I., Kontsevoy, Yu.A., and Sidorov, A.I., ZhTF, 1957, vol. 27, p. 246.

    Google Scholar 

  8. Khomchik, F.A., Parametri poluprovodnikovikh priborov (Parameters of Semiconductor Devices), Minsk: Nauka i tekhnika, 1969.

    Google Scholar 

  9. Sze, S.M., Physics of Semiconductor Devices, New York, Chichester, Brisbane, Toronto, Singspore: Wiley-Interscience, 1981.

    Google Scholar 

  10. Stepanenko, I.P., Osnovi teorii tranzistorov i tranzistornikh skhem (Fundamentals of the Theory of Transistors and Transistor Schemes), Moscow: Energoizdat, 1977.

    Google Scholar 

  11. Stafeev, V.I., ZhTF, 1958, vol. 28, p. 1631.

    Google Scholar 

  12. Aramyan, N.S., J. Contemp. Phys. (Armenian Ac. Sci.), 2007, vol. 42, p. 34.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Radiophysics and Electronics, NAS of Armenia, Ashtarak, Armenia

    N. S. Aramyan

Authors
  1. N. S. Aramyan
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Original Russian Text © N.S. Aramyan, 2008, published in Izvestiya NAN Armenii, Fizika, 2008, Vol. 43, No. 4, pp. 283–292.

About this article

Cite this article

Aramyan, N.S. Lifetime of nonequilibrium charge carriers in the base of p-n-junction semiconductor diode at arbitrary injection levels. J. Contemp. Phys. 43, 183–189 (2008). https://doi.org/10.3103/S1068337208040063

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1068337208040063

PACS numbers

Key words

Search

Navigation