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p-type ZnO films for preparation of p-n-junctions

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

Photoelectrical properties of ZnO films doped with Li acceptor impurity and prepared by the electron-beam evaporation method were investigated. The obtained films possess a p-type conductivity. Using p-ZnO:Li and n-ZnO:Ga films, the p-n-junctions were prepared and their photoelectrical properties were studied. The mechanism of charge carrier transport in these films and the influence of annealing on the type and mechanism of conductivity were investigated.

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Authors and Affiliations

  1. Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia

    N. R. Aghamalyan, R. K. Hovsepyan & S. I. Petrosyan

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  1. N. R. Aghamalyan
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  2. R. K. Hovsepyan
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  3. S. I. Petrosyan
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Additional information

Original Russian Text © N.R. Aghamalyan, R.K. Hovsepyan, S.I. Petrosyan, 2008, published in Izvestiya NAN Armenii, Fizika, 2008, Vol. 43, No. 4, pp. 274–282.

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Aghamalyan, N.R., Hovsepyan, R.K. & Petrosyan, S.I. p-type ZnO films for preparation of p-n-junctions. J. Contemp. Phys. 43, 177–182 (2008). https://doi.org/10.3103/S1068337208040051

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  • DOI: https://doi.org/10.3103/S1068337208040051

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