Abstract
The effect of interdiffusion of aluminum and indium atoms on the exciton emission energy and binding energy in InxGa1−xAs/AlyGa1−yAs quantum dots is studied. It is shown that the emission energy increases monotonically with increasing diffusion length, while the binding energy has a maximum.
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Original Russian Text © V.N. Mughnetsyan, A.A. Kirakosyan, 2008, published in Izvestiya NAN Armenii, Fizika, 2008, Vol. 43, No. 4, pp. 268–273.
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Mughnetsyan, V.N., Kirakosyan, A.A. Effect of interdiffusion of In and Al atoms on excitonic states in InxGa1−xAs/AlyGa1−yAs quantum dots. J. Contemp. Phys. 43, 173–176 (2008). https://doi.org/10.3103/S106833720804004X
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DOI: https://doi.org/10.3103/S106833720804004X