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Semiconductor Lasers with Improved Lasing Characteristics

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Abstract

We analyze the characteristics of semiconductor emitters based on separate-confinement double heterostructures with quantum wells with different configurations of waveguide layers. Lasers with narrow and broad waveguides are considered as applied to the problem of increasing the output power. Semiconductor emitters with undoped and doped waveguide layers are compared. We consider lasers with ultranarrow and broad strongly asymmetric waveguides. It is shown that the reduction of series and thermal resistance reduces the self-heating of lasers and increases the output power and efficiency. The prospects of using the epitaxial integration for designing lasers with several tunnel-coupled emitting sections for increasing the output power and luminosity are considered. The possibility of constructing monolith-integrated thyristor lasers combining the emitting section and an electron switch in a single crystal is demonstrated.

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Authors and Affiliations

  1. JSC Polyus Research Institute of Stelmakh, 117342, Moscow, Russia

    A. I. Danilov, A. V. Ivanov, V. P. Konyaev, Yu. V. Kurnyavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov & V. A. Simakov

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  1. A. I. Danilov
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  2. A. V. Ivanov
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  3. V. P. Konyaev
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  4. Yu. V. Kurnyavko
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  5. M. A. Ladugin
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  6. A. V. Lobintsov
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  7. A. A. Marmalyuk
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  8. S. M. Sapozhnikov
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  9. V. A. Simakov
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Correspondence to A. A. Marmalyuk.

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Translated by N. Wadhwa

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Danilov, A.I., Ivanov, A.V., Konyaev, V.P. et al. Semiconductor Lasers with Improved Lasing Characteristics. Bull. Lebedev Phys. Inst. 50 (Suppl 4), S405–S417 (2023). https://doi.org/10.3103/S1068335623160030

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