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Vortex States with Linear Electronic Spectrum in IV–VI Semiconductor Structures

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Abstract

It is theoretically shown that spin-polarized vortex states with linear electronic spectrum can exist in planar homogeneous structures of two-band semiconductors at any sign of the gap parameter. These states are localized at the surface of a cylinder with a microscopic radius, have the total angular momentum of 1/2 and are stabilized when an electric voltage is applied to both sides of the planar sample.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    V. S. Vinogradov

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  1. V. S. Vinogradov
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Correspondence to V. S. Vinogradov.

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Russian Text © V.S. Vinogradov, 2019, published in Kratkie Soobshcheniya po Fizike, 2019, Vol. 46, No. 2, pp. 40–46.

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Vinogradov, V.S. Vortex States with Linear Electronic Spectrum in IV–VI Semiconductor Structures. Bull. Lebedev Phys. Inst. 46, 65–69 (2019). https://doi.org/10.3103/S1068335619020064

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  • DOI: https://doi.org/10.3103/S1068335619020064

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