Abstract
The possibility of increasing the photoluminescence signal of Si1−xGex/Si quantum wells in the visible spectral range due to a change in the conduction band structure and the interaction of many-body states with plasma oscillations of metal nanoparticles is studied. The sample band structure was controlled using a uniaxial strain of ∼10−4. It is found that such an approach allows an increase in the emission intensity of biexcitons in the quantum well (x = 9%) by a factor of 2.4 at a temperature of 5 K. Metal nanoparticles deposited on the sample surface with a protective layer thickness of 20 nm allowed us to increase the luminescence intensity of quantum wells approximately by a factor of 2.7.
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Original Russian Text © S.N. Nikolaev, V.S. Krivobok, V.S. Bagaev, E.E. Onishchenko, 2017, published in Kratkie Soobshcheniya po Fizike, 2017, Vol. 44, No. 12, pp. 41–46.
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Nikolaev, S.N., Krivobok, V.S., Bagaev, V.S. et al. Visible luminescence enhancement methods in SiGe/Si heterostructures. Bull. Lebedev Phys. Inst. 44, 371–373 (2017). https://doi.org/10.3103/S1068335617120077
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DOI: https://doi.org/10.3103/S1068335617120077