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Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation

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Journal of Russian Laser Research Aims and scope

Abstract

We realize for the first time an experimental investigation of the IR and visible luminescence of SiGe/Si heterostructures with quantum well subjected to an external anisotropic deformation. We show that tensile strain along the [100] direction enhances the absolute and relative intensities of visible luminescence by a factor of 7/3 at a temperature of 5 K. This effect is absent for a tensile strain along the [110] direction. We explain the phenomenon observed in view of the model of single-photon biexciton recombination for the system in which the bottom of the conduction band is formed by only two opposite electronic valleys.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Prospect 53, Moscow, 119991, Russia

    S. N. Nikolaev, V. S. Krivobok, E. T. Davletov, V. S. Bagaev & E. E. Onishchenko

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    A. V. Novikov & M. V. Shaleev

  3. Lobachevsky State University, Nizhny Novgorod, 603950, Russia

    A. V. Novikov

Authors
  1. S. N. Nikolaev
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  2. V. S. Krivobok
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  3. E. T. Davletov
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  4. V. S. Bagaev
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  5. E. E. Onishchenko
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  6. A. V. Novikov
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  7. M. V. Shaleev
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Correspondence to S. N. Nikolaev.

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Nikolaev, S.N., Krivobok, V.S., Davletov, E.T. et al. Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation. J Russ Laser Res 39, 83–89 (2018). https://doi.org/10.1007/s10946-018-9692-6

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  • DOI: https://doi.org/10.1007/s10946-018-9692-6

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