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Hardness and electrical resistivity of Al–13 wt % Mg2Si pseudoeutectic alloy

  • Metallurgy of Nonferrous Metals
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Abstract

In the present work, effect of growth rates on microhardness, electrical properties and microstructure for directionally solidified Al–13 wt % Mg2Si pseudoeutectic alloy at a constant temperature gradient were studied. Directional solidification process were carried out with five different growth rates (V = 8.33–175.0 μm/s) at a constant temperature gradient (G = 6.68 K/mm) by using a Bridgman type directional solidification furnace. Microstructure of directionally solidified Al–13 wt % Mg2Si pseudoeutectic alloy was observed as Mg2Si coral-like structure phase dispersed into primary α-Al phase matrix. The electrical resistivity for Al–13 wt % Mg2Si pseudoeutectic alloy, were measured by the d.c. four-point probe method. The dependency ofmicrohardness and electrical resistivity on growth rates were obtained as HV = 135.7 (V)0.09 and ρ = 17.30 × 10−8(V)0.08, respectively for Al–Mg2Si pseudoeutectic alloy. The results obtained in present work were compared with the previous similar experimental results.

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Authors and Affiliations

  1. Department of Energy Systems Engineering, Ereğli Faculty of Engineering and Natural Sciences, Necmettin Erbakan University, Konya, 42310, Turkey

    Yusuf Kaygısız

  2. Department of Metallurgical and Materials Engineering, Faculty of Chemistry and Metallurgical Engineering, Yıldız Technical University, Davutpaşa-Esenler, İstanbul, 34210, Turkey

    Necmettin Maraşlı

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  1. Yusuf Kaygısız
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  2. Necmettin Maraşlı
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Correspondence to Yusuf Kaygısız.

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Kaygısız, Y., Maraşlı, N. Hardness and electrical resistivity of Al–13 wt % Mg2Si pseudoeutectic alloy. Russ. J. Non-ferrous Metals 58, 15–21 (2017). https://doi.org/10.3103/S1067821217010060

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  • DOI: https://doi.org/10.3103/S1067821217010060

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