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Electron Microscopy and Electron Energy Loss Spectroscopy of Thin Titanium Nitride Films in the TiNx/La:HfO2(Hf0.5Zr0.5O2)/TiNx/SiO2 System

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The structure and properties of TiNx electrodes obtained by plasma-assisted atomic layer deposition in the 20 nm TiNx/10 nm La:HfO2(Hf0.5Zr0.5O)/20 nm TiNx/1 μm SiO2 system have been studied by electron microscopy and electron energy loss spectroscopy. It is found that the material of the electrode has the composition TiNxOy, the bandgap ranges from 1.7 to 2.5 eV, the resistivity is 208 μΩ cm, and the temperature coefficient of resistivity in the range of 20–100°C equals –31.4 × 10–6 K–1.

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Funding

This study was supported under a State Assignment for the Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences.

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Authors and Affiliations

  1. Federal Research Center “Crystallography and Photonics,” Shubnikov Institute of Crystallography, Russian Academy of Sciences, 119333, Moscow, Russia

    E. I. Suvorova

  2. Prokhorov Institute of General Physics, Russian Academy of Sciences, 119991, Moscow, Russia

    O. V. Uvarov & K. V. Chizh

  3. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, 119991, Moscow, Russia

    A. A. Klimenko & K. V. Chizh

Authors
  1. E. I. Suvorova
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  2. O. V. Uvarov
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  3. A. A. Klimenko
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  4. K. V. Chizh
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Corresponding author

Correspondence to E. I. Suvorova.

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The authors declare that they have no conflicts of interest.

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Translated by O. Kadkin

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Suvorova, E.I., Uvarov, O.V., Klimenko, A.A. et al. Electron Microscopy and Electron Energy Loss Spectroscopy of Thin Titanium Nitride Films in the TiNx/La:HfO2(Hf0.5Zr0.5O2)/TiNx/SiO2 System. Bull. Russ. Acad. Sci. Phys. 87, 1466–1472 (2023). https://doi.org/10.3103/S1062873823703501

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  • DOI: https://doi.org/10.3103/S1062873823703501

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