Abstract
An experimental study is performed of the differences between the electronic states necessarily formed at the boundaries of a topological phase in a vacuum and a trivial buffer in the regions of heterojunction in topological materials based on Hg1 – xCdxTe epitaxial films. It is shown that the PT-symmetric terahertz photoconductivity observed in the specified structures is due precisely to states in the region of topological film/trivial buffer (or cap layer) interfaces.
REFERENCES
Hasan, M.Z. and Kane, C.L., Rev. Mod. Phys., 2010, vol. 82, p. 3045.
Volkov, B.A. and Pankratov, O.A., JETP Lett., 1985, vol. 42, no. 4, p. 145.
Volkov, B.A., Pakhomov, S.V., and Pankratov, O.A., Solid State Commun., 1987, vol. 61, no. 2, p. 93.
Brüne, C., Liu, C.X., Novik, E.G., et al., Phys. Rev. Lett., 2011, vol. 106, p. 126803.
Liu, C., Bian, G., Chang, T.R., et al., Phys. Rev. B, 2015, vol. 92, p. 115436.
Rogalski, A., Rep. Prog. Phys., 2005, vol. 68, p. 2267.
Weiler, M., Semiconductors and Semimetals, New York: Academic, 1981.
Orlita, M., Basko, D.M., Zholudev, M.S., et al., Nat. Phys., 2014, vol. 10, p. 233.
Teppe, F., Marcinkiewicz, M., Krishtopenko, S.S., et al., Nat. Commun., 2016, vol. 7, p. 12576.
Dvoretsky, S., Mikhailov, N., Sidorov, Y., et al., J. Electron. Mater., 2010, vol. 39, p. 918.
Varavin, V.S., Dvoretsky, S.A., Liberman, V.I., et al., J. Cryst. Growth, 1996, vol. 159, p. 1161.
Ruffenach, S., Kadykov, A., Rumyantsev, V.V., et al., APL Mater., 2017, vol. 5, no. 3, p. 035503.
Kvon, Z.D., Danilov, S.N., Mikhailov, N.N., et al., Phys. E (Amstardam, Neth.), 2008, vol. 40.
Savchenko, M.L., Otteneder, M., Dmitriev, I.A., et al., Appl. Phys. Lett., 2020, vol. 117, p. 201103.
Yaroshevich, A.S., Kvon, Z.D., Gusev, G.M., and Mikhailov, N.N., JETP Lett., 2020, vol. 111, no. 2, p. 121.
Galeeva, A.V., Artamkin, A.I., Mikhailov, N.N., et al., JETP Lett., 2017, vol. 106, p. 162.
Galeeva, A.V., Artamkin, A.I., Kazakov, A.S., et al., Beilsten J. Nanotechnol., 2018, vol. 9, p. 1035.
Galeeva, A.V., Kazakov, A.S., Artamkin, A.I., et al., Sci. Rep., 2020, vol. 10, p. 2377.
Ganichev, S.D., Emel’yanov, S.A., and Yaroshetskii, I.D., JETP Lett., 1982, vol. 35, p. 368.
Bel’kov, V.V., Ganichev, S.D. Schneider, P., et al., Solid. State. Commun., 2003, vol. 128, p. 283.
Kazakov, A.S., Galeeva, A.V., Artamkin, A.I., et al., Sci. Rep., 2021, vol. 11, p. 1587.
Funding
This work was supported by the Russian Science Foundation, project no. 19-02-00034. S.N. Danilov thanks the Volkswagen Stiftung Program (97738) for its support.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare they have no conflicts of interest.
Additional information
Translated by E. Boltukhina
About this article
Cite this article
Kazakov, A.S., Galeeva, A.V., Artamkin, A.I. et al. Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 – xCdxTe with an Inverted Energy Spectrum. Bull. Russ. Acad. Sci. Phys. 87, 739–743 (2023). https://doi.org/10.3103/S1062873823702118
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1062873823702118