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Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 – xCdxTe with an Inverted Energy Spectrum

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

An experimental study is performed of the differences between the electronic states necessarily formed at the boundaries of a topological phase in a vacuum and a trivial buffer in the regions of heterojunction in topological materials based on Hg1 – xCdxTe epitaxial films. It is shown that the PT-symmetric terahertz photoconductivity observed in the specified structures is due precisely to states in the region of topological film/trivial buffer (or cap layer) interfaces.

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Funding

This work was supported by the Russian Science Foundation, project no. 19-02-00034. S.N. Danilov thanks the Volkswagen Stiftung Program (97738) for its support.

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Correspondence to A. S. Kazakov.

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The authors declare they have no conflicts of interest.

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Translated by E. Boltukhina

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Kazakov, A.S., Galeeva, A.V., Artamkin, A.I. et al. Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 – xCdxTe with an Inverted Energy Spectrum. Bull. Russ. Acad. Sci. Phys. 87, 739–743 (2023). https://doi.org/10.3103/S1062873823702118

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  • DOI: https://doi.org/10.3103/S1062873823702118

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