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Effect of Ion-Stimulated Diffusion on the Distribution Profile of Elements on a Film–Substrate Interface

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

Results are presented from studying the effect ion-stimulated diffusion has on the profile of the distribution of chemical elements at a film–substrate interface during analysis with optical emission spectroscopy of a glow discharge. Sputtered films of iron garnets on a gadolinium–gallium garnet substrate before and after granulation via thermal annealing are investigated. The role of diffusion processes in shaping the distribution profile of elements at a film–substrate interface is shown. A technique is proposed for restoring the true shape of an interface profile without considering the effect the ion flux has on the film.

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Funding

This work was supported by the Russian Science Foundation, project no. 19-72-20154.

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Correspondence to S. V. Tomilin.

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The authors declare that they have no conflicts of interest.

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Translated by S. Rostovtseva

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Tomilin, S.V., Fedorenko, A.A., Berzhansky, V.N. et al. Effect of Ion-Stimulated Diffusion on the Distribution Profile of Elements on a Film–Substrate Interface. Bull. Russ. Acad. Sci. Phys. 86, 546–551 (2022). https://doi.org/10.3103/S1062873822050276

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  • DOI: https://doi.org/10.3103/S1062873822050276

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