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Noncontact determination of the rate of surface recombination of nonequilibrium charge carriers at the p–p+ (n–n+) boundaries of n+–p(n)–p+ silicon structures by means of compensation

  • Proceedings of the XVI A.P. Sukhorukov National Seminar “The Physics and Applications of Microwaves” (“Waves-2017”)
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

Calculations show that the rate of the surface recombination of nonequilibrium charge carriers at the back of a p(n) region with known lifetime values can be determined for n+–p(n)–p+ structures of silicon by non-contact measurement. This allows us to determine the photosensitivity contrast along a surface structure upon its local illumination.

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Authors and Affiliations

  1. Moscow State University, Moscow, 119991, Russia

    O. G. Koshelev & N. G. Vasiljev

Authors
  1. O. G. Koshelev
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  2. N. G. Vasiljev
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Correspondence to O. G. Koshelev.

Additional information

Original Russian Text © O.G. Koshelev, N.G. Vasiljev, 2018, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2018, Vol. 82, No. 1, pp. 109–113.

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Koshelev, O.G., Vasiljev, N.G. Noncontact determination of the rate of surface recombination of nonequilibrium charge carriers at the p–p+ (n–n+) boundaries of n+–p(n)–p+ silicon structures by means of compensation. Bull. Russ. Acad. Sci. Phys. 82, 98–101 (2018). https://doi.org/10.3103/S1062873818010112

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  • DOI: https://doi.org/10.3103/S1062873818010112

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