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A silicon donor layer in heavily doped GaN

  • Proceedings of the XIV All-Russian School Seminar on Condensed State Physics, Dedicated to the Memory of Academician A. M. Ilyin
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The properties of GaN layers heavily doped with silicon are investigated via photoluminescence spectroscopy. It is shown that excitons cease localizing on donors at a silicon atom concentration of 1.6 × 1019 cm−3; at higher dopant concentrations, the excitons decay. It is established that the donor binding energy falls as the silicon concentration rises.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia

    I. V. Osinnykh, K. S. Zhuravlev & T. V. Malin

  2. Novosibirsk State University, Novosibirsk, 630090, Russia

    I. V. Osinnykh & K. S. Zhuravlev

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    B. Ya. Ber & D. Yu. Kazancev

Authors
  1. I. V. Osinnykh
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  2. K. S. Zhuravlev
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  3. T. V. Malin
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  4. B. Ya. Ber
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  5. D. Yu. Kazancev
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Corresponding author

Correspondence to I. V. Osinnykh.

Additional information

Original Russian Text © I.V. Osinnykh, K.S. Zhuravlev, T.V. Malin, B.Ya. Ber, D.Yu. Kazancev, 2014, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2014, Vol. 78, No. 9, pp. 1187–1189.

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Osinnykh, I.V., Zhuravlev, K.S., Malin, T.V. et al. A silicon donor layer in heavily doped GaN. Bull. Russ. Acad. Sci. Phys. 78, 943–945 (2014). https://doi.org/10.3103/S1062873814090214

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  • DOI: https://doi.org/10.3103/S1062873814090214

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