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Superstructure phase transitions in Ge on Si (111) at the initial stage of epitaxial growth

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The surface phase transitions 7 × 7 → 5 × 5 for two-dimensional and c2 × 8 →7 × 7 and 7 × 7 → c2 × 8 for three-dimensional Ge islands epitaxially grown on Si(111) were found experimentally using scan- ning tunneling microscopy. The first two transitions are associated with an increase in the level of misfit strains, while the last is related to a decrease in the stress level during plastic relaxation.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    S. A. Teys, E. M. Trukhanov, A. S. Ilin & A. V. Kolesnikov

Authors
  1. S. A. Teys
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  2. E. M. Trukhanov
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  3. A. S. Ilin
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  4. A. V. Kolesnikov
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Corresponding author

Correspondence to S. A. Teys.

Additional information

Original Russian Text © S.A. Teys, E.M. Trukhanov, A.S. Ilin, A.V. Kolesnikov, 2011, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2011, Vol. 75, No. 8, pp. 1116–1119.

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Teys, S.A., Trukhanov, E.M., Ilin, A.S. et al. Superstructure phase transitions in Ge on Si (111) at the initial stage of epitaxial growth. Bull. Russ. Acad. Sci. Phys. 75, 1055–1058 (2011). https://doi.org/10.3103/S1062873811080375

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  • DOI: https://doi.org/10.3103/S1062873811080375

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