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Formation peculiarities and properties of ohmic contacts to n-GaN(AlN) and artificial diamond

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Abstract

The paper considers ohmic contacts of Au-TiB x -Al-Ti-n-GaN, Au-Pd-Ti-Pd-n-AlN and Au-Pd-Ti-n-C to the promising for use in microelectronics wide-gap semiconductors. Ohmic contact formation takes place after sequential layering of metal with further fast thermal processing, which leads to solid-phase reactions between the semiconductor and metal. It is shown that the use of X-ray amorphous TiB x layer in ohmic contact as the diffusion barrier allows for creating thermal stability contacts up to T = 900 °C. Current flow in the considered ohmic contacts is described using a model with current flow along metal shunts considering diffusion limitation on the charge carrier supply.

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  1. V. E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Kyiv, Ukraine

    V. N. Sheremet

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Original Russian Text © V.N. Sheremet, 2013, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2013, Vol. 56, No. 10, pp. 42–56.

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Sheremet, V.N. Formation peculiarities and properties of ohmic contacts to n-GaN(AlN) and artificial diamond. Radioelectron.Commun.Syst. 56, 493–501 (2013). https://doi.org/10.3103/S073527271310004X

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  • DOI: https://doi.org/10.3103/S073527271310004X

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