Abstract
The paper proposes a method of increasing the efficiency of Si and CuInSe2 solar cells using the impact ionization and impurity photovoltaic effect in pZnTe-pSi-nSi and pZnTe-pCuInSe2-n(CuInSe2)1−x (2InAs) x structures.
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Original Russian Text © M.S. Saidov, 2011, published in Geliotekhnika, 2011, No. 3, pp. 3–5.
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Saidov, M.S. Possibilities of increasing the efficiency of Si and CuInSe2 solar cells. Appl. Sol. Energy 47, 163–165 (2011). https://doi.org/10.3103/S0003701X11030169
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DOI: https://doi.org/10.3103/S0003701X11030169