Abstract
The pSi-n(Si2)1−x (ZnS) x (0 ≤ x ≤ 0.92) structure, on which thermovoltaic effect is observed, has been obtained by means of liquid-phase epitaxy from tin solution-melt on plates of p-type technical silicon. This effect is explained by grain boundary defects and influence of ZnS impurities in a thin layer adjacent to the p-n-junction.
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Original Russian Text © M.S. Saidov, A.S. Saidov, Sh.N. Usmonov, K.A. Amonov, 2009, published in Geliotekhnika, 2009, No. 4, pp. 102–104.
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Saidov, M.S., Saidov, A.S., Usmonov, S.N. et al. Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures. Appl. Sol. Energy 45, 285–286 (2009). https://doi.org/10.3103/S0003701X0904015X
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DOI: https://doi.org/10.3103/S0003701X0904015X