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3.3-kV IGBT modules: How to develop them and what can be achieved?

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Abstract

An IGBT module with high thermal and electrical chip utilization combined with high robustness and module reliability and securing compatibility with existing technology has been described.

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References

  1. Biermann, J., Schütze, T., Schilling, O., Pfaffenlehner, M., and Schäffer, C., New 3300 V Trench IGBT Module for Highest Converter Efficiency Proc. PCIM, 2005. Nürnberg.

  2. Cosaert, A., Beulque, M., Wolz, M., and et al. Thermal Properties of Power Terminals in High Power IGBT Modules Proc. PCIM, 2003. Nürnberg.

  3. Biermann, J., Schilling, O., Bauer, J.G., and Achatz, G., New 3300 V High Power Emicon-HDR Diode with High Dynamic Robustness Proc. PCIM, 2003. Nürnberg.

  4. Bakran, M., Helsper, M., Eckel, H., and Nagel, A., Multi-Commutation of IGBTs in Large Inverters Proc. PCIM, 2005. Dresden.

  5. Soelkner, G., Kaindl, W., Schulze, H.-J., and Wachutka, G., Reliability of Power Electronic Devices Against Cosmc Radiation-Induced Failure Microelectronics Reliability, no. 44.

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Authors
  1. T. Schutze
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  2. J. Biermann
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  3. R. Shpanke
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  4. M. Pfaffenlehner
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Additional information

Original Russian Text © T. Schutze, J. Biermann, R. Shpanke, M. Pfaffenlehner, 2008, published in Elektrotekhnika, 2008, No. 6, pp. 3–8.

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Schutze, T., Biermann, J., Shpanke, R. et al. 3.3-kV IGBT modules: How to develop them and what can be achieved?. Russ. Electr. Engin. 79, 288–292 (2008). https://doi.org/10.3103/S1068371208060023

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  • DOI: https://doi.org/10.3103/S1068371208060023

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