Abstract
High power IGBT module is widely used in the field of rail transit, in which the module failure caused by overheating is the most common. In this paper, the cause of thermal stress in IGBT module is analyzed, and the three-dimensional finite element model of IGBT module packaging structure is established by using ANSYS software. Finally, the temperature field and stress distribution under the coupling effect of temperature field and structure field are obtained. The results show that the bonding wire is close to the chip with higher temperature, so it has higher thermal stress and is easy to fail.
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Acknowledgments
The project was supported in part by Key-Area Research and Development Program of Guangdong Province under Grant 2018B010142001.
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Zhou, Z., Sha, Y., Wei, L., Guo, M., Meng, L. (2022). Thermal Stress Analysis of IGBT Module Based on ANSYS. In: Li, X. (eds) Advances in Intelligent Automation and Soft Computing. IASC 2021. Lecture Notes on Data Engineering and Communications Technologies, vol 80. Springer, Cham. https://doi.org/10.1007/978-3-030-81007-8_30
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DOI: https://doi.org/10.1007/978-3-030-81007-8_30
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Online ISBN: 978-3-030-81007-8
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