Skip to main content
SpringerLink
Log in

Plasma treatment studies of MIS devices

  • Research Article
  • Published:
Central European Journal of Physics

Abstract

Silicon nitride films have emerged as the possible future dielectrics for ultra large scale integration (ULSI). Because the interface state density of silicon nitride/silicon interface in metal insulator semiconductor (MIS) configuration is more than an order of magnitude larger than that of silicon dioxide/silicon interface, plasma treatment studies on silicon nitride films have been undertaken for the possible improvement. Accordingly, silicon nitride films of various composition have been prepared by plasma enhanced chemical vapor deposition (PECVD) system using silane(SiH4) and ammonia(NH3) with nitrogen(N2) as the diluent and MIS devices have been fabricated with as well as without plasma treated silicon nitride as the insulator. A considerable improvement in the silicon nitride/silicon interface is observed on ammonia plasma treatment while nitrous oxide(N2O) plasma treatment studies have resulted in the establishment of a novel plasma oxidation process.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R. H. Dennard et al., IEEE J. Solid-St. Circ. 9, 256 (1974)

    Article  Google Scholar 

  2. G. Baccarani, M.R. Wordeman, R. H. Dennard, IEEE T. Electron Dev. 31, 452 (1984)

    Article  Google Scholar 

  3. P. A. Packan, Science 285, 2079 (1999)

    Article  Google Scholar 

  4. G. D. Wilk, R. M. Wallace, J. M. Anthony, J. Appl. Phys. 89, 5243 (2001)

    Article  ADS  Google Scholar 

  5. M. Bose, D. K. Basa, D. N. Bose, Appl. Surf. Sci. 158, 275 (2000)

    Article  ADS  Google Scholar 

  6. D. K. Basa, M. Bose, D. N. Bose, J. Appl. Phys. 87, 4324 (2000)

    Article  ADS  Google Scholar 

  7. M. Bose, D. K. Basa, D. N. Bose, Appl. Surf. Sci. 171, 130 (2001)

    Article  ADS  Google Scholar 

  8. M. Bose, D. K. Basa, D. N. Bose, J. Vac. Sci. Technol. A19, 41 (2001)

    ADS  Google Scholar 

  9. M. Bose, D. K. Basa, D. N. Bose, Material Letters 48, 336 (2001)

    Article  Google Scholar 

  10. P. T. Chenetal., J. Appl. Phys. 104, 014106 (2008)

    Article  ADS  Google Scholar 

  11. P. D. Kirsch, T. Lafford, Q. Wang, J. G. Ekerdt, J. Appl. Phys. 99, 023508 (2006)

    Article  ADS  Google Scholar 

  12. E. Jud, M. Tang, Y. M. Chiang, J. Appl. Phys. 103, 114108 (2008)

    Article  ADS  Google Scholar 

  13. Y. Wu, G. Lucovsky, IEEE Electr. Device L. 19, 367 (1998)

    Article  ADS  Google Scholar 

  14. C. E. Morosanu, Thin Solid Films 65, 171 (1980)

    Article  ADS  Google Scholar 

  15. C. J. Bedelletal., Nucl. Instrum, Meth. B59-60, 245 (1991)

    ADS  Google Scholar 

  16. M. C. Hugon, F. Delmotte, B. Agius, J. L. Courant, J. Vac. Sci. Technol. A15, 3143 (1997)

    ADS  Google Scholar 

  17. S. Graciaetal., J. Appl. Phys. 83, 332 (1998)

    Article  ADS  Google Scholar 

  18. H. Arai, K. Tanaka, S. Kohda, J. Vac. Sci. Technol. B 6, 831 (1988)

    Article  Google Scholar 

  19. Z. Lu, S. S. He, Y. Ma, G. Lucovsky, J. Non-Cryst. Solids, 187, 340 (1995)

    Article  ADS  Google Scholar 

  20. Y. Ma, T. Yasuda, G. Lucovsky, J. Vac. Sci. Technol. A 11, 952 (1993)

    Article  ADS  Google Scholar 

  21. W. Honlien, H. Reisinger, Appl. Surf. Sci. 39, 178 (1989)

    Article  ADS  Google Scholar 

  22. Y. Ma, T. Yasuda, G. Lucovsky, Appl. Phys. Lett. 64, 2226 (1994)

    Article  ADS  Google Scholar 

  23. M. Bose, D. N. Bose, D. K. Basa, Material Letters 52, 417 (2002)

    Article  Google Scholar 

  24. E. Rauhala, Nucl. Instrum. Meth. B40-41, 790 (1989)

    ADS  Google Scholar 

  25. E. Rauhala, J. Saarilahti, N. Nath, Nucl. Instrum. Meth. B61, 83 (1991)

    ADS  Google Scholar 

  26. J. Saarilathi, User’s Guide-GISA 3. 96: Program for ionscatteringanalysis, 1996

  27. T. Ito, I. Kato, T. Nozaki, T. Nakamura, H. Ishikawa, Appl. Phys. Lett. 38, 370 (1981)

    Article  ADS  Google Scholar 

  28. L. M. Terman, Solid State Electron. 5, 285 (1962)

    Article  ADS  Google Scholar 

  29. G. Dupont, H. Caquineau, B. Despax, R. Berjoan, A. Dollet, J. Phys. DAppl. Phys. 30, 1064 (1997)

    ADS  Google Scholar 

  30. S. Ghosh, D. N. Bose, J. Mater. Sci. -Mater. El. 5, 193 (1994)

    Google Scholar 

  31. J. Robertson, M. J. Powell, Appl. Phys. Lett. 44, 415 (1984)

    Article  ADS  Google Scholar 

  32. Z. Yin, F. W. Smith, Phys. Rev. B42, 3666 (1990)

    ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, Utkal University, Bhubaneswar, 751004, India

    Deepak Kumar Basa

Authors
  1. Deepak Kumar Basa
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Deepak Kumar Basa.

Additional information

Presented during the 6th Solid State Surfaces and Interfaces Conference, 24–27 November, 2008, Smolenice, Slovakia

About this article

Cite this article

Basa, D.K. Plasma treatment studies of MIS devices. centr.eur.j.phys. 8, 400–407 (2010). https://doi.org/10.2478/s11534-009-0095-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.2478/s11534-009-0095-8

Keywords

Search

Navigation