Abstract
The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/°C, with typical error of less than±1.0°C over a temperature range from −50°C to +125°C. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation (0.5 mW), low output impedance (less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of −50°C− +125°C. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.
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References
Amador, R., Polanco, A., 1998. Technological compensation circuit for accurate temperature sensor.Sensors and Actuators, A69: 172–177.
Amador, R., Polanco, A., Nagy, A., 1999. The spread of ν andV go and its influence on the sensitivity of a bipolar IC Celsius sensor.Sensors and Actuators, A77: 9–13.
Behzad, R., 2001. Design of Analog CMOS Integrated Circuits. McGraw-Hill Higher Education, New York.
Bianchi, R. A., Karam, J. M., Courtois, B., Nadal, R., Pressecq, F., Sifflet, S., 2000. CMOS-compatible temperature sensor with digital output for wide temperature range applications.Microelectronics Journal,31: 803–810.
Meijer, G. C. M., 1980. An IC temperature transducer with an intrinsic reference.IEEE Journal of Solid-State Circuits, SC15(3): 370–373.
Montane, E., Bota, S. A., Samitier, J., 1998. A compact temperature sensor for a 1.0μm CMOS technology using lateral p-n-p transistors.Microelectronics Journal,29: 277–281.
Moore, B. D., 1999. Tradeoffs in selecting IC temperature sensors.Microprocessors and Microsystems.23: 181–184.
Pease, R. A., 1984. A new Fahrenheit temperature sensor.IEEE Journal of Solid-State Circuits. SC19 (6): 971–977.
Tsividis, Y. P., 1980. Accurate analysis of temperature effects in IC-VBE characteristics with application to bandgap reference sources.IEEE Journal of Solid-State Circuits, SC15(6): 1076–1083.
Wang, G., Meijer, G. C. M., 2000. The temperature characteristics of bipolar transistors fabricated in CMOS technology.Sènsors and Actuators, A87: 81–89.
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Project (No. 991106204) supported by Science and Technology Committee of Zhejiang Province, China
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Xiao-bo, W., Meng-lian, Z., Zhi-gang, F. et al. A novel voltage output integrated circuit temperature sensor. J. Zhejiang Univ. Sci. A 3, 553–558 (2002). https://doi.org/10.1631/jzus.2002.0553
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DOI: https://doi.org/10.1631/jzus.2002.0553