Abstract
The possibility of ferroelectricity in orthorhombic V2O5 thin films was investigated. Films were deposited via either a chemical solution deposition (CSD) route or by RF magnetron sputtering. Highly (001) oriented V2O5 films were achieved with both deposition routes at temperatures as low as 300°C. No evidence for ferroelectricity was observed, even in films which had been doped to provide local nuclei for polarization reversal. Loss originated from mid-gap trap states stemming from oxygen vacancies that were observed with photoluminescence, supplemented by piezoresponse force microscopy measurements. These trap states may have helped mimic ferroelectricity in previous reports on V2O5.
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This material is based upon work supported by the Center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers Program under Award Number DE-SC0021118.
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Jacques, L., Shetty, S., Vega, F.J. et al. Deposition and dielectric characterization of highly oriented V2O5 thin films. MRS Communications 14, 76–81 (2024). https://doi.org/10.1557/s43579-023-00502-7
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DOI: https://doi.org/10.1557/s43579-023-00502-7