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Amorphous and hexagonal boron nitride growth using bromide chemistry

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Abstract

A plasma-enhanced chemical vapour deposition process based on a micro-plasma working in argon/nitrogen mixture and using a bromide precursor is used to grow boron nitride. Without hydrogen (H2) in the reactive media, growth of amorphous boron nitride (a-BN) is observed, while the injection of H2 in the deposition chamber leads to the growth of hexagonal boron nitride (h-BN), H2 limiting the negative effect of bromide. The distance between the plasma source and the substrate has a strong influence on the films stoichiometry which partly explains why the h-BN layers are not stable with a fast deterioration into boric acid.

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Data are available on request.

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Acknowledgments

This work was supported by the LABEX SEAM (Science and Engineering for Advanced Materials and devices), University Sorbonne Paris Nord and the French Research National Agency (DESYNIB Project, No. ANR-16CE08-0004 JCJC). We also would like to thank our colleagues from LSPM, MPQ, and LPGP laboratories.

Funding

This work was funded by Agence Nationale de la Recherche, ANR-16CE08-0004, Claudia Lazzaroni, Laboratoire d’Excellence SEAM.

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Authors and Affiliations

  1. Laboratoire des Sciences des Procédés et des Matériaux, Université Sorbonne Paris Nord, CNRS, 93430, Villetaneuse, France

    M. Jacquemin, A. Remigy, B. Menacer, V. Mille & C. Lazzaroni

  2. Laboratoire des Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 75013, Paris, France

    C. Barraud

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  1. M. Jacquemin
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Correspondence to C. Lazzaroni.

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Jacquemin, M., Remigy, A., Menacer, B. et al. Amorphous and hexagonal boron nitride growth using bromide chemistry. MRS Communications 14, 63–68 (2024). https://doi.org/10.1557/s43579-023-00500-9

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