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A new method for the dynamic deformation characterization of thin-film stacked structures

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Abstract

The dynamic deformation of thin-film stacked structures in the bond pad of microelectronic devices usually occurs when the contact load rapidly increases during the wire-bonding process. This work developed dynamic strain rate model for analyzing the dynamic response of thin-film stacked structures at varying loading rates. Dynamic strain rate tests were performed by maintaining the ratio of instantaneous load rate to load. The indentation stress–strain curves at different testing protocols were plotted. We found that the deformation decreased as the prescribed rate increased because of the rate-dependent characteristics of the thin Cu film.

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Data availability

Documents for supporting the current research are available from the corresponding author on reasonable request.

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Acknowledgments

This work was supported by Economic Development Board of Singapore and Infineon Technologies Asia Pacific Pte. Ltd through the Industrial Postgraduate Program, Nanyang Technological University, Singapore.

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Authors and Affiliations

  1. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore

    Facheng Zhao, Yujia Tian & Kun Zhou

  2. Operation Backend Development, Infineon Technologies Asia Pacific Pte Ltd., 168, Kallang Way, Singapore, 349253, Singapore

    Facheng Zhao, Alfred Yeo & Kai Yang

  3. Micron Semiconductor Asia Pte. Ltd., 990 Bendemeer Rd., Singapore, 339942, Singapore

    Faxing Che

Authors
  1. Facheng Zhao
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  2. Alfred Yeo
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  3. Faxing Che
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Correspondence to Kun Zhou.

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Zhao, F., Yeo, A., Che, F. et al. A new method for the dynamic deformation characterization of thin-film stacked structures. MRS Communications 11, 917–923 (2021). https://doi.org/10.1557/s43579-021-00115-y

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