Abstract
Area-selective electroless deposition of gold nanostructures on a 6H-SiC substrate is demonstrated. Gold nanostructures selectively grow on a focused ion beam (FIB)-irradiated area on the 6H-SiC substrate when the substrate is exposed to a pure HAuCl4 aqueous solution. The nucleation of gold was more favorable on the Si face than on the C face. Quantitative evaluation of the amount of gold grown both on SiC and silicon is conducted to discuss the growth of gold, where silicon is a substrate we used in our previous study on this method. We reveal the mechanism of the growth of gold nanostructures as follows: Dangling bond defects formed in the FIB-irradiated area initiate the nucleation of gold by reducing Au ions in the solution at the surface. Once the SiC-gold or the silicon-gold boundary, which meets the Schottky contact condition, has formed, electrons in the non-FIB-irradiated region under/around the FIB-irradiated one also reduce Au ions on the gold surface through the boundary.
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H. Itasaka, M. Nishi, Y. Shimotsuma, K. Miura, M. Watanabe, H. Jain, and K. Hirao, J. Ceram. Soc. Jpn. 122, 543 (2014).
H. Itasaka, M. Nishi, and K. Hirao, Jpn. J. Appl. Phys. 53, 06JF06 (2014).
N. Kubo, T. Homma, Y. Hondo, and T. Osaka, Electrochim. Acta 51, 834 (2005).
J. C. Burton, F. H. Long, and I. T. Ferguson, J. Appl. Phys. 86, 2073 (1999).
Z.C. Feng, S.C. Lien, J.H. Zhao, X.W. Sun c, W. Lu, Thin Sol. Films 516, 5217 (2008).
N. Chaâbane, A. Debelle, G. Sattonnay, P. Trocellier, Y. Serruys, L. Thomé, Y. Zhang, W.J. Weber, C. Meis, L. Gosmain, and A. Boulle, Nucl. Instrum. Methods Phys. Rev. B 286, 108 (2012).
T. Matsuoka, M. Nishi, Y. Shimotsuma, K. Miura, and K. Hirao, J. Ceram. Soc. Jpn. 118, 575 (2010).
Magdalena Sabisch, Peter Krüger, and Johannes Pollmann, Phys. Rev. B 55, 10561 (1997).
K. V. Emtsev, Th. Seyller,* and L. Ley, L. Broekman, A. Tadich, J. D. Riley, and R. G. C. Leckey, and M. Preuss, Phys. Rev. B 73, 075412 (2006).
J. R. Waldrop, R. W. Grant, Y. C. Wang, and R. F. Davis, J. Appl. Phys. 72, 4757 (1992).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) 2 nd ed., p. 850.
Lisa M. Porter, Robert F. Davis, Mater. Sci. Eng. B 34, 83 (1995).
Acknowledgments
This research was partially supported by JSPS KAKENHI Grant Number 25288107 and the Center of Innovation Program from Japan Science and Technology Agency, JST.
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Itasaka, H., Nishi, M., Shimizu, M. et al. Area-Selective Electroless Deposition of Gold Nanostructures on SiC Using Focused-Ion-Beam Preprocessing. MRS Online Proceedings Library 1748, 14–19 (2014). https://doi.org/10.1557/opl.2015.74
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DOI: https://doi.org/10.1557/opl.2015.74