Abstract
Thin films of pure aluminum doped ZnO and with addition of nitrogen, oxygen and hydrogen have been prepared by magnetron sputtering. The spectral absorption coefficient close to the band gap energy has been determined by spectrophotometry and analyzed regarding band tailing and creation of defect bands. We found, that an improvement of Raman crystallinity under O2-rich growth conditions is not accompanied by a suppression of band tailing as expected. An additional absorption feature evolves for layers grown in N2 containing atmosphere. Doping with hydrogen attenuates sub-band gap absorption.
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Acknowledgments
We thank Martin Reiche for technical assistance, Marc A. Gluba for support with the Raman setup and Martina Trahms for performing optical and Hall spectroscopy. This work was supported by the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety BMU under contract No. 0325299E.
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Schönau, S., Ruske, F., Neubert, S. et al. Investigation of Band Tailing in Sputtered ZnO:Al Thin Films Regarding Structural Properties and Impurities. MRS Online Proceedings Library 1699, 1–6 (2014). https://doi.org/10.1557/opl.2014.534
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DOI: https://doi.org/10.1557/opl.2014.534