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Electrical Property of Transparent TiO2:Nb / ZnO:Ga Layered Film

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Abstract

Nb-doped TiO2 (TNO) films, Ga-doped ZnO (GZO) films and TNO/GZO layered films were fabricated on glass substrates and electrical properties of TNO/GZO layered films were investigated in terms of interaction between TNO and GZO layers. By a thermal annealing in vacuum, the observed resistivity of the TNO/GZO layered films was lower than that of the single layered films fabricated and annealed at the same conditions. The resistivity reduction observed in the layered structure is not explained by the parallel connection of the TNO and GZO layers, indicating that there exists an interaction between these two layers. The TNO/GZO films with low resistivity have still been transparent.

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Authors and Affiliations

  1. Department of Physics and Materials Science, Shimane University, 1060 Nishikawatsu, Matsue, 690-8504, Japan

    Seiji Ichiyanagi, Yasuji Yamada & Shuhei Funaki

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  1. Seiji Ichiyanagi
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  2. Yasuji Yamada
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  3. Shuhei Funaki
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Ichiyanagi, S., Yamada, Y. & Funaki, S. Electrical Property of Transparent TiO2:Nb / ZnO:Ga Layered Film. MRS Online Proceedings Library 1604, 7013 (2013). https://doi.org/10.1557/opl.2014.334

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  • DOI: https://doi.org/10.1557/opl.2014.334

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