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Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

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Abstract

The prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

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Authors
  1. Robert M. Wallace
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  2. Paul C. McIntyre
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  3. Jiyoung Kim
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  4. Yoshio Nishi
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Wallace, R.M., McIntyre, P.C., Kim, J. et al. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors. MRS Bulletin 34, 493–503 (2009). https://doi.org/10.1557/mrs2009.137

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