Abstract
The following is an edited transcript from the 2000 MRS Outstanding Young Investigator presentation given by Frances M. Ross at the 2000 Materials Research Society Spring Meeting in San Francisco. Ross was cited for her “innovative and powerful experimental studies, based upon development of novel in situ electron microscopy techniques, that have provided fundamental new understanding of nucleation, growth, oxidation, and etching processes in a wide range of materials systems.” AWebcast of Ross’ presentation in Real Media format can be viewed via the MRSWeb site, www.mrs.org/multimedia/spring2000/.
Similar content being viewed by others
References
M. Hammar, F. Le Goues, J. Tersoff, M.C. Reuter, and R.M. Tromp, Surf. Sci. 349 (1995) p. 129.
F.M. Ross, F.K. LeGoues, J. Tersoff, R.M. Tromp, and M.C. Reuter, Microsc. Res. Tech. 42 (1998) p. 281.
M.L. McDonald, J.M. Gibson, and F.C. Unterwald, Rev. Sci. Instrum. 60 (1989) p. 700.
R.M. Tromp, M. Mankos, M.C. Reuter, A.W. Ellis, and M. Copel, Surf. Rev. Lett. 5 (1998) p. 1189.
D. Cherns, Philos. Mag. 30 (1974) p. 549.
J. Lander and J. Morrison, J. Appl. Phys. 33 (1962) p. 2089.
F. Smith and G. Ghidini, J. Electrochem. Soc. 129 (1982) p. 1300.
F.M. Ross and J.M. Gibson, Phys. Rev. Lett. 68 (1992) p. 1782.
F.M. Ross, J.M. Gibson, and R.D. Twesten, Surf. Sci. 310 (1994) p. 243.
K. Ohishi and T. Hattori, Jpn. J. Appl. Phys., Part 2: Lett. 33 (1994) p. L675.
H. Nohira, H. Sekikawa, M. Matsuda, and T. Hattori, Appl. Surf. Sci. 104/105 (1996) p. 359.
H. Watanabe, K. Kato, T. Uda, K. Fujita, M. Ichikawa, T. Kawamura, and K. Terakura, Phys. Rev. Lett. 80 (1998) p. 345.
N. Miyata, H. Watanabe, and M. Ichikawa, Phys. Rev. B 58 (1998) p. 13670.
N. Miyata, H. Watanabe, and M. Ichikawa, Appl. Phys. Lett. 72 (1998) p. 1715.
A.C. Oliver and J.M. Blakely, in Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures, edited by D.A. Buchanan, A.H. Edwards, H.J. von Bardeleben, and T. Hattori (Mater. Res. Soc. Symp. Proc. 592, Warrendale, PA, 2000) p. 45.
For example, see N.F. Mott, Philos. Mag. B 55 (1987) p. 117.
F.M. Ross, J. Tersoff, R.M. Tromp, M. Reuter, and P.A. Bennett, J. Electron Microsc. 48 (1999) p. 1059.
F.M. Ross, IBM J. Res. Dev. 44 (2000) p. 489.
C.W.T. Bulle-Lieuwma, D.E.W. Vandenhoudt, J. Henz, N. Onda, and H. von Kanel, J. Appl. Phys. 73 (1993) p. 3220.
C. Cabral Jr., L.A. Clevenger, J.M.E. Harper, d’F.M. Heurle, R.A. Roy, C. Lavoie, K.L. Saenger, G.L. Miles, R.W. Mann, and J.S. Nakos, Appl. Phys. Lett. 71 (1997) p. 3531.
Materials Research Society Spring 2000 Meeting WebCasts Home Page, http://www.mrs.org/ multimedia/spring2000/ (accessed November 2000).
T.I. Kamins, E.C. Carr, R.S. Williams, and S.J. Rosner, J. Appl. Phys. 81 (1997) p. 211.
G. Medeiros-Ribiero, A.M. Bratkovsky, T.I. Kamins, D.A.A. Ohlberg, and R.S. Williams, Science 279 (1998) p. 353.
F.M. Ross, J. Tersoff, and R.M. Tromp, Phys. Rev. Lett. 80 (1998) p. 984.
F.M. Ross, R.M. Tromp, and M.C. Reuter, Science 286 (1999) p. 1931.
F.M. Ross, P.A. Bennett, R.M. Tromp, J. Tersoff, and M. Reuter, Micron 30 (1999) p. 21.
Rights and permissions
About this article
Cite this article
Ross, F.M. Dynamic Studies of Semiconductor Growth Processes Using In Situ Electron Microscopy. MRS Bulletin 26, 94–101 (2001). https://doi.org/10.1557/mrs2001.295
Published:
Issue Date:
DOI: https://doi.org/10.1557/mrs2001.295