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Atom probe tomography of nanoscale electronic materials

  • Atom Probe Tomography
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Abstract

As the characteristic length scale of electronic devices shrinks, so does the required scale for measurement techniques to provide useful feedback during development and fabrication. The current capabilities of atom probe tomography (APT), such as detecting a low number of dopant atoms in nanoscale devices or studying diffusion effects in a nanowire (NW), make this technique important for metrology on the nanoscale. Here we review recent APT investigations applied to transistors (including regions such as gate oxide, channel, source, drain, contacts, etc.), heterogeneous dopant incorporation in NWs, and Pt-based nanoparticles.

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Authors and Affiliations

  1. CAMECA Instruments, Inc., USA

    D. J. Larson & T. J. Prosa

  2. Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, USA

    D. E. Perea

  3. Institute for Materials Research, Tohoku University, Japan

    K. Inoue

  4. Institute Materials Microelectronics Nanosciences of Provence, National Center for Scientific Research/Aix-Marseille University, France

    D. Mangelinck

Authors
  1. D. J. Larson
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  2. T. J. Prosa
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  3. D. E. Perea
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  4. K. Inoue
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  5. D. Mangelinck
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Correspondence to D. J. Larson.

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Larson, D.J., Prosa, T.J., Perea, D.E. et al. Atom probe tomography of nanoscale electronic materials. MRS Bulletin 41, 30–34 (2016). https://doi.org/10.1557/mrs.2015.308

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