Abstract
Effective schemes to address contact resistance between silicide and a highly doped diffused junction are examined. Some of the techniques introduced include (1) metal work function tuning, (2) interfacial dipole engineering, and (3) phase modulation of the nickel silicide. These techniques allow modulation of the Schottky barrier of NiSi to n-Si to less than 0.3 eV, which is crucial to achieve sub 10−8 Ω cm2 contact resistivity for the sub-32 nm technology node.
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Loh, WY., Coss, B. Junction contact materials and interfaces in Si channel devices. MRS Bulletin 36, 97–100 (2011). https://doi.org/10.1557/mrs.2011.7
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DOI: https://doi.org/10.1557/mrs.2011.7