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Phase change materials

  • Resistive switching phenomena in thin films: Materials, devices, and applications
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Abstract

Phase change materials can be switched rapidly and repeatedly between amorphous and crystalline phases, which differ distinctly in their optical and electrical properties. This combination of properties is utilized to store information in rewritable optical storage media and in emerging phase change memory technology. This article describes the physical properties of phase change materials such as Ge2 Sb2 Te5 and relates these properties to specific structural and bonding characteristics. Electrical conduction and switching, which are relevant for phase change memory operation, are explained from a physical perspective. Phase change memory device integration and technology development are discussed, including aspects of access device selection and integration.

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Authors and Affiliations

  1. IBM T.J. Watson Research Center, United States

    Simone Raoux

  2. Dipartimento di Elettronica e Informazione and IUNET, Politecnico di Milano, Italy

    Daniele Ielmini

  3. I. Physikalisches Institut (IA), RWTH Aachen University, Germany

    Matthias Wuttig

  4. Intel Corporation, United States

    Ilya Karpov

Authors
  1. Simone Raoux
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  2. Daniele Ielmini
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  3. Matthias Wuttig
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  4. Ilya Karpov
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Correspondence to Simone Raoux.

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Raoux, S., Ielmini, D., Wuttig, M. et al. Phase change materials. MRS Bulletin 37, 118–123 (2012). https://doi.org/10.1557/mrs.2011.357

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  • DOI: https://doi.org/10.1557/mrs.2011.357

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