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Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond

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Abstract

Direct determination of barrier height (ΦBH) value between Ir and single crystal (001) hydrogen-terminated diamond with lightly boron doped has been performed using x-ray photoelectron spectroscopy technique. 70 nm Ir islands were formed on hydrogen-terminated diamond surface using anodic aluminum oxide. The ΦBH value for lr/hydrogen-terminated diamond was -0.43 ± 0.14 eV, indicating that Ir was a suitable metal for ohmic contact with hydrogen-terminated diamond. The band diagram of lr/hydrogen-terminated diamond was obtained. The experimental ΦBH was compared with the theoretical ΦBH in this work.

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Acknowledgment

This work was supported by the National Natural Science Foundation of China (No. 61705176) and China Postdoctoral Science and Foundation (No. 2017M620449 and 2018T111056). We thank Mr. ZiJun Ren at the Instrument Analysis Center of Xi’an Jiaotong University for his assistance with SEM analysis.

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Authors and Affiliations

  1. Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an, Shaanxi Province, 710049, China

    Yan-Feng Wang, Wei Wang, Xiaohui Chang, Juan Wang, Jiao Fu, Tianfei Zhu, Zongchen Liu, Yan Liang, Dan Zhao, Zhangcheng Liu, Minghui Zhang, Kaiyue Wang, Hong-Xing Wang & Ruozheng Wang

  2. School of Materials Science and Engineering, Taiyuan University of Science and Technology, 030024, Taiyuan, Shanxi Province, China

    Kaiyue Wang

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  1. Yan-Feng Wang
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Correspondence to Hong-Xing Wang.

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Wang, YF., Wang, W., Chang, X. et al. Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond. MRS Communications 9, 165–169 (2019). https://doi.org/10.1557/mrc.2019.20

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