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Published by Materials Research Society with Cambridge University Press, 14 September 2016.
In Nomoto et al.,1 on page 291 the wrong distance units were listed regarding the extraction of the P and B concentration in Si NCs and the oxide region. They were listed as “m,” when they should have been listed as “nm.” The sentence therefore should have read: “The P and B concentration in Si NCs and the oxide region was extracted from the distance around 0.5 nm and −2.5 nm, respectively.”
The publisher regrets this error.
Reference
K. Nomoto, S. Gutsch, A.V. Ceguerra, A. Breen, H. Sugimoto, M. Fujii, I. Perez-Wurfl, S.P. Ringer, and G. Conibeer: Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide. MRS Communications 6 (3), 287–292 (2016). doi: 10.1557/mrc.2016.37.
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The original article can be found online at https://doi.org/10.1557/mrc.2016.37
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Nomoto, K., Gutsch, S., Ceguerra, A.V. et al. Erratum to: Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide — ERRATUM. MRS Communications 6, 469 (2016). https://doi.org/10.1557/mrc.2016.47
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DOI: https://doi.org/10.1557/mrc.2016.47