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Quantitative in-situ TEM study of stress-assisted grain growth

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Abstract

We present a quantitative in-situ transmission electron microscope (TEM) study of stress-assisted grain growth in 75 nm thick platinum thin films. We utilized notch-induced stress concentration to observe the microstructural evolution in real time. From quantitative measurements, we find that rapid grain growth occurred above 290 MPa of far field stress and ~0.14% elongation. This value is found to be higher than that required for stable interface motion but lower than the stress required for unstable grain boundary motion. We attribute such grain growth to geometrical incompatibility arising out of crystallographic misorientation in adjoining grains, or in other words, geometrically necessary grain growth.

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Authors and Affiliations

  1. Department of Mechanical Engineering and Program in Materials Science and Engineering, University of California, Riverside, California, 92521, USA

    Sandeep Kumar

  2. Mechanical and Nuclear Engineering, Penn State University, University Park, Pennsylvania, 16802, USA

    Tarek Alam & Aman Haque

Authors
  1. Sandeep Kumar
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  2. Tarek Alam
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  3. Aman Haque
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Correspondence to Sandeep Kumar.

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For supplementary materials for this article, please visit http://dx.doi.org/10.1557/mrc.2013.15

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Kumar, S., Alam, T. & Haque, A. Quantitative in-situ TEM study of stress-assisted grain growth. MRS Communications 3, 101–105 (2013). https://doi.org/10.1557/mrc.2013.15

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  • DOI: https://doi.org/10.1557/mrc.2013.15

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