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Simultaneously grown single wall carbon nanotube channel and electrodes in a thin film transistor

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Abstract

By chemical vapor deposition, aligned single wall carbon nanotubes (SWNTs) and a network of SWNTs are simultaneously grown as the channel and the source–drain electrodes of thin film transistors (TFTs). The increase of aligned SWNTs increases the channel conductance without changing the contact resistance. However, the increase of network-type SWNTs from 19 to 32.5 (SWNTs/μm) decreases the contact resistance fivefold. The contact resistance of all-SWNT TFT is three times lower compared with that of an SWNT TFT using metal electrodes. The all- SWNT TFTs transferred on polyethylene terephthalate (PET) show a transparency of >80% in the visible range of wavelengths.

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Acknowledgments

This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) 2009-0066879, partially supported by Grant (2011-0031630) from the Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea.

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Authors and Affiliations

  1. Department of Material Science and Engineering, NanoCentury KI, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Korea

    Jinsup Lee, Bo-Hyun Kim, Kar Tham Hyun & Seokwoo Jeon

  2. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-701, Korea

    Seong Jun Kang

  3. Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Korea

    Seok-Hee Lee

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  1. Jinsup Lee
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  2. Bo-Hyun Kim
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Correspondence to Seokwoo Jeon.

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For supplementary material for this article, please visit http://dx.doi.org/10.1557/mrc.2012.12

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Lee, J., Kim, BH., Kang, S.J. et al. Simultaneously grown single wall carbon nanotube channel and electrodes in a thin film transistor. MRS Communications 2, 79–83 (2012). https://doi.org/10.1557/mrc.2012.12

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  • DOI: https://doi.org/10.1557/mrc.2012.12

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