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SiC-bonded diamond materials produced by pressureless silicon infiltration

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Abstract

Extremely hard, wear-resistant SiC-bonded diamond materials with diamond contents of approximately 45–60% by volume can be prepared by pressureless infiltration of shaped diamond compacts with silicon. Materials with diamond grain sizes in the range of 10–100 µm can be produced having a free silicon content of less than 5 vol%. Components with large dimensions can be prepared as graded or ungraded materials. Graded components are composed of silicon infiltrated SiC base material with diamond–SiC composite layers of 0.1 mm by dip coating technology to several mm in thickness by doubled die pressing in regions with high loading. This creates the possibility of producing low-cost, wear-resistant components of various geometries and dimensions with bending strengths of 400–500 MPa, hardness values of 48 GPa, and fracture toughness levels of 4.5–5 MPa m1/2 for use in extreme wear conditions. Thermal conductivities of up to 500 W/(m K) were obtained, render these materials interesting for heat sinks.

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ACKNOWLEDGMENTS

The results presented here were generated in projects financed by the German Federal Ministry of Education and Science (BMBF)37 and by the BMWi/AIF based on a decision of the German Bundestag (parliament).

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Authors and Affiliations

  1. Fraunhofer IKTS, Fraunhofer Institute for Ceramic Technologies and Systems, Dresden, 01277, Germany

    Björn Matthey, Steffen Kunze, Alexander Michaelis & Mathias Herrmann

  2. Fraunhofer IWM, Fraunhofer Institute for Mechanics of Materials, Freiburg im Breisgau, 79108, Germany

    Martin Hörner & Bernhard Blug

  3. KSB Aktiengesellschaft, Pegnitz, 91257, Germany

    Maike van Geldern

Authors
  1. Björn Matthey
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  2. Steffen Kunze
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  3. Martin Hörner
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  7. Mathias Herrmann
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Correspondence to Björn Matthey.

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Matthey, B., Kunze, S., Hörner, M. et al. SiC-bonded diamond materials produced by pressureless silicon infiltration. Journal of Materials Research 32, 3362–3371 (2017). https://doi.org/10.1557/jmr.2017.218

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