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Experimental phase diagram of SiC in CH3SiCl3–Ar–H2 system produced by fluidized bed chemical vapor deposition and its nuclear applications

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Abstract

A systematic study of SiC layer preparation in CH3SiCl3–Ar–H2 system by fluidized bed chemical vapor deposition was given. The phase, morphology, grain size, and crystal structure of the products were investigated based on series characterizations methods. Free silicon was formed at lower temperatures while free carbon was formed at higher temperatures. By introducing argon in the deposition system, silicon formation was suppressed and cauliflower structure with subordinate small particles was observed. The formation mechanisms of different microstructures were discussed. The experimental phase diagram of CVD SiC composed of three regions of SiC + Si, SiC and SiC + C was established and boundaries of the three regions were given. The phase diagram obtained can be used to guide the new applications of SiC series materials. The low-temperature dense SiC, porous SiC with tunable densities, small grained SiC, and composite SiC materials were prepared successfully, also it was indicated that SiC jointing technology can be developed based on the phase diagram accordingly in the future.

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ACKNOWLEDGMENTS

This work was supported by National Natural Science Foundation of China (Grant Nos: 51302148, 21306097), and Research Fund for Independent Research Projects of Tsinghua University (Grant Nos: 20131089217, 20121088038).

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Authors and Affiliations

  1. Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, Beijing, 100084, China

    Rongzheng Liu, Malin Liu & Jiaxing Chang

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  1. Rongzheng Liu
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  2. Malin Liu
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  3. Jiaxing Chang
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Correspondence to Malin Liu.

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Liu, R., Liu, M. & Chang, J. Experimental phase diagram of SiC in CH3SiCl3–Ar–H2 system produced by fluidized bed chemical vapor deposition and its nuclear applications. Journal of Materials Research 31, 2695–2705 (2016). https://doi.org/10.1557/jmr.2016.274

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