Skip to main content
SpringerLink
Log in

Magnetic-field induced anisotropy in electromigration behavior of Sn–Ag–Cu solder interconnects

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

Sn–Ag–Cu solder interconnects were made by solidifying the solder balls in a magnetic field and subsequently tested for their electromigration behavior. The orientation of the tin grains was analyzed by electron backscattered diffraction. It was found that the c-axis of Sn grain tended to rotate away from the direction of the magnetic field during solidification, resulting in an enhanced electromigration resistance for the solder joint when the current was applied along the direction of the magnetic field, as evidenced by a smaller electromigration-induced polarity effect in the growth of the interfacial intermetallic compound. Such a reduced polarity-effect of electromigration is shown to agree well with the anisotropy in the diffusivity of the active diffusion species, Cu, in the tetragonal Sn. The difference of free energy change caused by the anisotropy in the magnetic susceptibility of the tetragonal Sn during solidification is suggested to be the main factor for this phenomenon.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

FIG. 1
FIG. 2
FIG. 3
FIG. 4
FIG. 5
FIG. 6

Similar content being viewed by others

References

  1. K.N. Tu: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451–5473 (2003).

    Article  CAS  Google Scholar 

  2. S.W. Liang, C. Chen, J.K. Han, L.H. Xu, K.N. Tu, and Y.S. Lai: Blocking hillock and whisker growth by intermetallic compound formation in Sn-0.7Cu flip chip solder joints under electromigration. J. Appl. Phys. 107, 093715 (2010).

    Article  Google Scholar 

  3. F. Guo, G.C. Xu, H.W. He, M.K. Zhao, J. Sun, and C.H. Wang: Effect of electromigration and isothermal aging on the formation of metal whiskers and hillocks in eutectic Sn-Bi solder joints and reaction films. J. Electron. Mater. 38, 2647–2658 (2009).

    Article  CAS  Google Scholar 

  4. W.J. Boettinger, C.E. Johnson, L.A. Bendersky, K.W. Moon, M.E. Williams, and G.R. Stafford: Whisker and hillock formation on Sn, Sn–Cu and Sn–Pb electrodeposits. Acta Mater. 53, 5033–5050 (2005).

    Article  CAS  Google Scholar 

  5. Q.L. Yang and J.K. Shang: Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect. J. Electron. Mater. 34, 1363–1367 (2005).

    Article  CAS  Google Scholar 

  6. X.F. Zhang, J.D. Guo, and J.K. Shang: Abnormal polarity effect of electromigration on intermetallic compound formation in Sn–9Zn solder interconnect. Scr. Mater. 57(6), 513–516 (2007).

    Article  CAS  Google Scholar 

  7. H. Gan and K.N. Tu: Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples. J. Appl. Phys. 97, 063514 (2005).

    Article  Google Scholar 

  8. Y.C. Hsu, C.K. Chou, P.C. Liu, C. Chen, D.J. Yao, T. Chou, and K.N. Tu: Electromigration in Pb-free SnAg3.8Cu0.7 solder stripes. J. Appl. Phys. 98, 033523 (2005).

    Article  Google Scholar 

  9. Q.S. Zhu, H.Y. Liu, L. Zhang, Z.G. Wang, and J.K. Shang: Surface morphology of Sn-rich solder interconnects after electrical loading. J. Electron. Mater. 41, 741–747 (2012).

    Article  CAS  Google Scholar 

  10. F. Ren, J.W. Nah, K.N. Tu, B.S. Xiong, L.H. Xu, and J.H.L. Pang: Electromigration induced ductile-to-brittle transition in lead-free solder joints. Appl. Phys. Lett. 89, 141911–141914 (2006).

    Article  Google Scholar 

  11. C.E. Ho, A. Lee, and K.N. Subramanian: Design of solder joints for fundamental studies on the effects of electromigration. J. Mater. Sci.: Mater. Electron. 18, 569–574 (2007).

    CAS  Google Scholar 

  12. J. Lienig: Electromigration and its impact on physical design in future technologies. In Proceedings of the 2013 ACM International Symposium on Physical Design (ACM, New York, NY, 2013); pp. 33–40.

    Chapter  Google Scholar 

  13. C. Chen and C. Huang: Effects of silver doping on electromigration of eutectic SnBi solder. J. Alloys Compd. 461, 235–241 (2008).

    Article  CAS  Google Scholar 

  14. C.M. Chen, C.C. Huang, C.N. Liao, and K.M. Liou: Effects of Cu doping on the microstructural evolution in the eutectic SnBi solder stripes under annealing and current stressing. J. Electron. Mater. 36, 760–765 (2007).

    Article  Google Scholar 

  15. M. Lu, D.Y. Shih, S.K. Kang, C. Goldsmith, and P. Flaitzb: Effect of Zn doping on SnAg solder microstructure and electromigration stability. J. Appl. Phys. 106(5), 053509 (2009).

    Article  Google Scholar 

  16. A. Kumar, M. He, and Z. Chen: Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder. Surf. Coat. Technol. 198, 283–286 (2005).

    Article  CAS  Google Scholar 

  17. B.F. Dyson: Diffusion of gold and silver in tin single crystals. J. Appl. Phys. 37, 2375–2377 (1966).

    Article  CAS  Google Scholar 

  18. B.F. Dyson, T.R. Anthony, and D.J. Turnbull: Interstitial diffusion of copper in tin. J. Appl. Phys. 38, 3408 (1967).

    Article  CAS  Google Scholar 

  19. F.H. Huang and H.B. Huntington: Diffusion of Sb124, Cd109, Sn113, and Zn65 in tin. Phys. Rev. B. 9, 1479–1488 (1974).

    Article  CAS  Google Scholar 

  20. D.C. Yeh and H.B. Huntington: Extreme fast-diffusion system: Nickel in single-crystal tin. Phys. Rev. Lett. 53, 1469–1472 (1984).

    Article  CAS  Google Scholar 

  21. M.H. Lu, D.Y. Shih, P. Lauro, C. Goldsmith, and D.W. Henderson: Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders. Appl. Phys. Lett. 92, 211909 (2008).

    Article  Google Scholar 

  22. Y.W. Wang, K.H. Lu, V. Gupta, L. Stiborek, D. Shirley, S-H. Chae, J. Im, and P.S. Ho: Effects of Sn grain structure on the electromigration of Sn–Ag solder joints. J. Mater. Res. 27, 1131–1141 (2012).

    Article  CAS  Google Scholar 

  23. T.C. Huang, T.L. Yang, J.H. Ke, C.H. Hsueh, and C.R. Kao: Effects of Sn grain orientation on substrate dissolution and intermetallic precipitation in solder joints under electron current stressing. Scr. Mater. 80, 37–40 (2014).

    Article  CAS  Google Scholar 

  24. C.E. Ho, C.H. Yang, and L.H. Hsu: Electromigration in thin-film solder joints. Surf. Coat. Technol. 259, 257–261 (2005).

    Article  Google Scholar 

  25. J.Q. Chen, J.D. Guo, K.L. Liu, and J.K. Shang: Dependence of electromigration damage on Sn grain orientation in Sn–Ag–Cu solder joints. J. Appl. Phys. 114, 153509 (2013).

    Article  Google Scholar 

  26. S. Li, C. Wu, K. Sassa, and S. Asai: The control of crystal orientation in ceramics by imposition of a high magnetic field. Mater. Sci. Eng., A 422, 227–231 (2006).

    Article  Google Scholar 

  27. B.A. Legrand, D. Chateigner, R. Perrier de la Bathie, and R. Tournier: Orientation by solidification in a magnetic field: A new process to texture SmCo compounds used as permanent magnets. J. Magn. Magn. Mater. 173, 20–28 (1997).

    Article  CAS  Google Scholar 

  28. M. Tahashi, M. Ishihara, K. Sassa, and S. Asai: Control of crystal orientation in deposited films of bismuth vaporized in laser and resistance heating methods under a high magnetic field. Mater. Trans. JIM 41, 985–990 (2000).

    Article  CAS  Google Scholar 

  29. S. Asai, K-s. Sassa, and M. Tahashi: Crystal orientation of non-magnetic materials by imposition of a high magnetic field. Sci. Technol. Adv. Mater. 4, 455–460 (2003).

    Article  CAS  Google Scholar 

  30. W.L. Schaich: Theory of the driving force of electromigration: weak-charge solutions. Phys. Rev. B 13, 3350–3359 (1976).

    Article  Google Scholar 

  31. H.B. Huntington and A.R. Grone: Current-induced marker motion in gold wires. J. Phys. Chem. Solids 20, 76–87 (1961).

    Article  CAS  Google Scholar 

Download references

ACKNOWLEDGMENTS

This work was supported by the National Basic Research Program of China, Grant No. 2010CB631006, the Natural Science Foundation of China, Grant Nos. 51171191 and 51101161, the Major National Science and Technology Program of China, Grant No. 2011ZX02602, National key scientific instrument and equipment development projects of China, Grant No. 2013YQ120355, and Natural Science Foundation of Liaoning Province, Grant No. 2013020015.

Author information

Authors and Affiliations

  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

    Jian-Qiang Chen, Jing-Dong Guo, Hui-Cai Ma, Kai-Lang Liu, Qing-sheng Zhu & Jian Ku Shang

  2. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

    Jian Ku Shang

Authors
  1. Jian-Qiang Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jing-Dong Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Hui-Cai Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Kai-Lang Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Qing-sheng Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Jian Ku Shang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Jing-Dong Guo or Jian Ku Shang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Chen, JQ., Guo, JD., Ma, HC. et al. Magnetic-field induced anisotropy in electromigration behavior of Sn–Ag–Cu solder interconnects. Journal of Materials Research 30, 1065–1071 (2015). https://doi.org/10.1557/jmr.2015.85

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/jmr.2015.85

Search

Navigation